Measuring the multilayer silicon based microstructure using differential reflectance spectroscopy.

The yield of a large-area ultra-thin display panel depends on the realization of designed thickness of multilayer films of all pixels. Measuring the thicknesses of multilayer films of a single pixel is crucial to the accurate manufacture. However, the thinnest layer is reaching the sub-20nm level, and different layers feature remarkable divergence in thickness with similar optical constants. This turns to a key obstruction to the thickness characterization by optical spectroscopy. Based on the tiny differences in absorptivity, a fast method for measuring the film thickness in a single pixel is proposed which combines the layer number reducing model and micro-area differential reflectance spectroscopy. The lower layers can be considered as semi-infinite in the corresponding spectral range whose thickness is infinite in the fitting algorithm. Hence, the thickness of the upper layer is fitted in a simplified layer structure. For demonstration, a multilayer silicon microstructure in a single pixel, p-Si/a-Si/n-Si (10nm/950nm/50nm) on complex substrate, is measured. The light spot diameter is about 60 microns with measuring-time in 2 seconds. The measurement deviation is 3% compared by a commercial ellipsometer. To conclude, the proposed method realizes the layer number reduction for fitting multilayer thickness with large thickness difference and similar optical constants, which provides a powerful approach for multilayer microstructure characterizations.

Imaging layer thickness of large-area graphene using reference-aided optical differential reflection technique.

Transparent layers are critical for enhancing optical contrast of graphene on a substrate. However, once the substrate is fully covered by large-area graphene, there are no accurate transparent layer and reference for optical contrast calculations. The thickness uncertainty of the transparent layer reduces the analytical accuracy of graphene. Thus, in this Letter, we propose a reference-aided differential reflection (DR) method with a dual-light path. The accurate thickness of the transparent layer is obtained by improving the DR spectrum sensitivity using a designable reference. Hence, the analytical accuracy of graphene thickness is guaranteed. To demonstrate this concept, a centimeter-scale chemical-vapor-deposition-synthesized graphene was measured on a SiO2/Si substrate. The thickness of underlying SiO2 was first identified with the 1 nm resolution by the DR spectrum. Then, the thickness distribution of graphene was directly deduced from a DR map with submonolayer resolution at a preferred wavelength. The results were also confirmed by ellipsometry and atomic force microscopy. As a result, this new method provides an extra degree of freedom for the DR method to accurately measure the thickness of large-area two-dimensional materials.

Evaporable Glass-State Molecule-Assisted Transfer of Clean and Intact Graphene onto Arbitrary Substrates.

Graphene and its clean transfer methods have gathered growing interest and concern in recent decades. Here, we develop a novel large-scale intact transferring technology of paraffin wax onto arbitrary substrates. The wax will then be removed by thermal evaporation, avoiding uncontrollable reactions and leaving no residues. For characterizations, we adopt Raman, FT-IR, XPS, and DRS to measure the optical reflection difference on various surfaces and the thickness of graphene accurately. All the results demonstrate transferred surfaces' cleanliness and our method's validity. This technique allows for an effective transfer of graphene and enables a wider range of applications in many fields.

Black Phosphorus Nano-Polarizer with High Extinction Ratio in Visible and Near-Infrared Regime.

We study computationally the design of a high extinction ratio nano polarizer based on black phosphorus (BP). A scattering-matrix calculation method is applied to compute the overall polarization extinction ratio along two orthogonal directions. The results reveal that, with a resonance cavity of SiO2, both BP/ SiO 2 /Si and h-BN/BP/ SiO 2 /Si configurations can build a linear polarizer with extinction ratio higher than 16 dB at a polarized wavelength in the range of 400 nm⁻900 nm. The polarization wavelength is tunable by adjusting the thickness of the BP layer while the thicknesses of the isotrocpic layers are in charge of extinction ratios. The additional top layer of h-BN was used to prevent BP degradation from oxidation and strengthens the practical applications of BP polarizer. The study shows that the BP/ SiO 2 /Si structure, with a silicon compatible and easy-to-realize method, is a valuable solution when designing polarization functional module in integrated photonics and optical communications circuits.

Wavelength tunable polarizer based on layered black phosphorus on Si/SiO2 substrate.

We report on both the theoretical and experimental design of a black phosphorus (BP)-based reflective linear polarizer on Si/SiO2 substrate in visible range using the Fabry-Perot cavities method. Thanks to the optical anisotropy of BP, polarization wavelength regulation and a high extinction ratio are achievable via optimizing the thickness of BP. Using azimuth-dependent reflectance difference microscopy, we directly measured a huge optical anisotropy of 1.58, corresponding to an extinction ratio of ∼9 dB, from a 96 nm BP on a silicon substrate capped by 260 nm thermally oxidized silicon at a wavelength of 690 nm for the first time, to the best of our knowledge. Our results not only provide a new route to designing nanoscale polarizers based on anisotropic two-dimensional (2D) materials, promoting the application of 2D materials in integrated optoelectronics and system-on-chip, but also suggest a modulation technique for optical anisotropy by integrating the BP film with cavity structures.

Normal-incidence reflectance difference spectroscopy based on a liquid crystal variable retarder.

We propose liquid crystal variable retarder-based reflectance difference spectroscopy for normal-incidence measurements. Principles, instrumentation, data collection and reduction, and calibration procedures are provided. The signal noise is better than 10-3, and the spectral range is from 1.6 to 2.4 eV with 346 photon energy channels. As a demonstration, reflectance difference signals of a multilayer pentacene film on poly (ethylene terephthalate) (PET) film are presented with different polarization azimuths. The characteristic peaks at 1.8 and 1.97 eV, corresponding to the Davydov splitting of pentacene crystal, are observed, which indicate well-ordered in-plane anisotropic structure of pentacene crystal film on PET. Thanks to normal incidence, this design is immune to adjusting the optical structure for the measurements with different working distances, and the objective lens is easily integrated to realize microarea measurements.

Optimization for liquid crystal variable retarder-based spectroscopic polarization measurements.

We present an approach for improving liquid crystal variable retarder (LCVR)-based spectroscopic polarization measurements. As deduced mathematically, the transfer coefficients from the random intensity noise to the signal noise are functions of modulation parameters of the LCVR, i.e., modulation range (MR) and initial retardation. Simulations allow more details about the roles of two parameters. A broad MR reduces effectively the values of the coefficients and leads to a better signal quality. However, as the MR narrows, initial retardation begins to influence the signal quality. To obtain a high-quality spectrum, a recommended solution is to settle the MR more than π at each wavelength. This treatment has two advantages: non-sinusoidal modulation becomes possible and the modulations do not average to zero. Moreover, it weakens the interference of non-uniform intensity distribution in wavelengths of the signal spectrum. These conclusions are proven in experiments. Further, this approach is valid for other polarimeters and ellipsometers based on LCVRs.